Influence of the near‐band‐edge surface states on the luminescence efficiency of InP
作者:
J. M. Moison,
M. Van Rompay,
M. Bensoussan,
期刊:
Applied Physics Letters
(AIP Available online 1986)
卷期:
Volume 48,
issue 20
页码: 1362-1364
ISSN:0003-6951
年代: 1986
DOI:10.1063/1.96910
出版商: AIP
数据来源: AIP
摘要:
We report the first simultaneous measurements of the photoluminescence yield and of the basic electronic properties (density of states, position of the Fermi level) of InP surfaces subjected to various treatments under ultrahigh vacuum conditions. The surface densities of states located near the band edges are found to govern the surface recombination process. Annealing under As pressure which moves these densities out of the band gap is shown to yield a surface with low surface recombination, in agreeement with this framework.
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