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The growth of high quality AlxGa1−xAs by molecular beam epitaxy and its application to double‐heterojunction lasers

 

作者: Douglas M. Collins,   Dan E. Mars,   Stephen J. Eglash,  

 

期刊: Journal of Vacuum Science&Technology B: Microelectronics Processing and Phenomena  （AIP Available online 1983）
卷期: Volume 1, issue 2  

页码: 170-173

 

ISSN:0734-211X

 

年代: 1983

 

DOI:10.1116/1.582526

 

出版商: American Vacuum Society

 

关键词: heterojunctions;molecular beam epitaxy;semiconductor lasers;fabrication;silicon ions;beryllium ions;crystal doping;mobility;recombination;current density

 

数据来源: AIP

 

摘要:

The molecular beam epitaxial (MBE) growth of high quality Si‐doped (n‐type) and Be‐doped (p‐type) AlxGa1−xAs with 0

 

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