Calculations on the Shape and Extent of Space Charge Regions in Semiconductor Surfaces
作者:
G. C. Dousmanis,
R. C. Duncan,
期刊:
Journal of Applied Physics
(AIP Available online 1958)
卷期:
Volume 29,
issue 12
页码: 1627-1629
ISSN:0021-8979
年代: 1958
DOI:10.1063/1.1723012
出版商: AIP
数据来源: AIP
摘要:
The shape and extent of space charge regions in semiconductor surfaces are briefly discussed. Curves describing the potential as a function of distance inside the semiconductor are obtained by numerical integration of the Poisson equation. The curves apply to all semiconductors. They show the effects of different resistivities and the increased depth of the space charge regions expected in pure III‐V compounds over those encountered in Ge and Si.
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