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Reactive ion etching of GaAs using BCl3

 

作者: G. J. Sonek,   J. M. Ballantyne,  

 

期刊: Journal of Vacuum Science&Technology B: Microelectronics Processing and Phenomena  （AIP Available online 1984）
卷期: Volume 2, issue 4  

页码: 653-657

 

ISSN:0734-211X

 

年代: 1984

 

DOI:10.1116/1.582857

 

出版商: American Vacuum Society

 

关键词: GALLIUM ARSENIDES;BORON CHLORIDES;ETCHING;PRESSURE DEPENDENCE;MEDIUM VACUUM;ANISOTROPY;PLASMA JETS;USES;GaAs

 

数据来源: AIP

 

摘要:

The reactive ion etching of GaAs has been investigated in BCl3plasma discharges. Etching rates have been characterized as functions of pressure (10–25 mTorr), power density (∼0.05–0.5W/cm2), and Cl2/BCl3gas compositions. Rates of ∼12–20 nm/min have been obtained, and are significantly lower than for other chlorinated plasmas. Etching profiles exhibit a high degree of anisotropy and smooth surface morphologies.

 

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