Effects of indium diffusion on the properties of ZnSe:Mn dc thin‐film electroluminescent devices
作者:
Masakazu Kobayashi,
Naoki Mino,
Makoto Konagai,
Kiyoshi Takahashi,
期刊:
Journal of Applied Physics
(AIP Available online 1985)
卷期:
Volume 57,
issue 8
页码: 2905-2908
ISSN:0021-8979
年代: 1985
DOI:10.1063/1.335229
出版商: AIP
数据来源: AIP
摘要:
ZnSe:Mn dc thin‐film electroluminescent (EL) devices were prepared by a molecular beam growth method on glass substrates coated with transparent conductive oxide. We found that the EL properties were affected by the grade of the oxide. The EL properties were found to depend on the range of indium diffusion from the oxide to the ZnSe:Mn host layer. The effective thickness of the host layer was varied by the In diffusion. Based upon these results, we have proposed a new type of dc thin‐film EL cell, namely an Al/ZnSe:Mn/ZnSe:In/oxide structure. A ZnSe:In layer was prepared as a buffer layer that would improve the crystallinity of the ZnSe:Mn host layer.
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