The kinetics of processes related to the formation of C49 and C54 Ti(Si1−yGey)2germanosilicide phases in the two relaxed and strained Ti/Si1−xGexsystems (x1=0.35 andx2=0.20) in the temperature range 600–800 °C are considered. These processes have been studied through Auger electron spectroscopy, secondary ion mass spectroscopy, x‐ray diffraction, and Raman scattering spectroscopy supported by ion beam etching techniques. Si/Ge ‘‘intergrain’’ alloy has been found between the grains of the C49 or/and C54 phases, with a Ge‐rich part Si1−zGezofz=2x–3xin the upper region. At higher temperatures, the Ge concentration in the Ge‐rich alloy decreases and its volume increases. The temperature required for obtaining similar changes are higher whenx2<x1. A kinetic electron‐related model is proposed to explain the observed phenomena. ©1996 American Institute of Physics.