Reactive ion etching of GaAs in a chlorine plasma
作者:
E. L. Hu,
R. E. Howard,
期刊:
Journal of Vacuum Science&Technology B: Microelectronics Processing and Phenomena
(AIP Available online 1984)
卷期:
Volume 2,
issue 1
页码: 85-88
ISSN:0734-211X
年代: 1984
DOI:10.1116/1.582923
出版商: American Vacuum Society
关键词: etching;gallium arsenides;chemical reactions;ion beams;chlorine;argon;plasma;medium vacuum
数据来源: AIP
摘要:
Chlorine was used to carry out the reactive ion etching (RIE) of GaAs. At 5 mTorr pressure and 270 V bias, it was found to etch at a rate>1 μ/min, and produced features having vertical sidewalls and a clean substrate surface. The mechanism of chlorine RIE of GaAs was studied by examining etch rates and profiles obtained using gases of different mixtures of chlorine and argon. The results are consonant with proposed mechanisms of GaAs etching by chlorine in both the plasma and reactive ion beam etching regimes.
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