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Very stable a‐Si:H prepared by ‘‘chemical annealing’’

 

作者: Hajime Shirai,   Jun‐ichi Hanna,   Isamu Shimizu,  

 

期刊: AIP Conference Proceedings  （AIP Available online 1991）
卷期: Volume 234, issue 1  

页码: 203-210

 

ISSN:0094-243X

 

年代: 1991

 

DOI:10.1063/1.41029

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Highly stable a‐Si:H was prepared by a novel technique termed ‘‘chemical annealing’’. The light induced metastable defects were reduced dramatically in the films prepared by this method at 300 °C or higher. The structural relaxation in the vicinity of the growing surface was enhanced by the treatments with atomic hydrogen or excited noble gases, He* and Ar*.

 

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