Insitucharacterization of InP surfaces after low‐energy hydrogen ion cleaning
作者:
D. Gallet,
G. Hollinger,
C. Santinelli,
L. Goldstein,
期刊:
Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
(AIP Available online 1992)
卷期:
Volume 10,
issue 4
页码: 1267-1272
ISSN:1071-1023
年代: 1992
DOI:10.1116/1.585898
出版商: American Vacuum Society
关键词: INDIUM PHOSPHIDES;ION COLLISIONS;HYDROGEN IONS;SURFACE CLEANING;ANNEALING;X RADIATION;PHOTOELECTRON SPECTROSCOPY;RHEED;SURFACE STRUCTURE;EV RANGE 10−100;EV RANGE 100−1000;SURFACE STATES;InP
数据来源: AIP
摘要:
Hydrogen ion cleaning procedures of InP(100) surfaces have been studied and the effect of hydrogen on carbon and oxygen contaminations were particularly investigated. The induced structural surface modifications were studied by x‐ray photoelectron spectroscopy andinsitureflected high‐energy electron diffraction just after ion bombardment and after annealing under an arsenic overpressure. Results show that cleaning with hydrogen ions leaves an indium‐rich surface layer on the InP surface. After hydrogen ion bombardment, structural changes of the surface occur and their irreversibility after As stabilization depends on the hydrogen dose. If this dose does not exceed a critical value of about 3×1016ions/cm−2, the structural properties of the InP surface can be restored after thermal annealing under arsenic overpressure. However, both unannealed and annealed surfaces show a strong pinning of the Fermi level, with the creation of defects 0.25 eV below the minimum conduction band, which indicates poor electronic properties always after hydrogen ion bombardment.
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