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Spin–disorder scattering in europium‐doped indium antimonide thin films

 

作者: D. T. Morelli,   D. L. Partin,   J. Heremans,   C. M. Thrush,  

 

期刊: Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena  （AIP Available online 1992）
卷期: Volume 10, issue 1  

页码: 110-113

 

ISSN:1071-1023

 

年代: 1992

 

DOI:10.1116/1.586308

 

出版商: American Vacuum Society

 

关键词: MAGNETORESISTANCE;CARRIER MOBILITY;EUROPIUM ADDITIONS;INDIUM ANTIMONIDES;NARROW BAND GAP SEMICONDUCTORS;THIN FILMS;InSb

 

数据来源: AIP

 

摘要:

We have studied the low temperature magnetoresistance of In1−xEuxSb for a range of europium concentrations. We find that the addition of the rare earth element reduces the carrier mobility substantially and alters dramatically the character of the magnetoresistance. In particular, we observe negative magnetoresistance for 0.012

 

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