Low‐pressure chemical vapor deposited WSiXhas been characterized and optimized through the use of screening and modeling experimental designs. In the screening study, the effects of temperature, pressure, gas flow rates, and a predeposition treatment were determined for a list of properties which included deposition rate, resistivity, stress, stoichiometry, oxidation rate, particle generation, and resistance to chemical attack. Over the process domain covered, temperature, WF6flow rate, and SiH4flow rate were found to affect deposition rate, resistivity, film stress, and stoichiometry while stoichiometry was also affected by pressure. WSiXfilms produced in the screening study ranged in stoichiometry fromX=2.1 to 3.0. The oxidation rate of these samples was found to be insensitive to deposition conditions and unrelated to the as‐deposited stoichiometry. As‐deposited and annealed film stress were found to decrease linearly with increasing silicon content of the as‐deposited films. Similarly, the as‐deposited and postannealed resistivity of WSiXfilms were found to be a function of the initial stoichiometry. Manufacturability related properties such as particle generation, chemical resistance, and uniformity measures involving sheet resistance, resistivity, and film thickness were found to be largely insensitive to the process factors studied. Response surface models were developed for deposition rate, annealed resistivity, annealed stress, and stoichiometry and were used to guide the final process optimization. The optimized process window was relatively large and yielded WSiXfilms with an annealed (950 °C, 30 min) resistivity of ∼75 μΩ cm, an as‐deposited Si/W atom ratio of ∼2.5, annealed tensile stress of ∼1.2×1010dyne/cm2, and deposition rates of 9 to 10.5 Å/s.