Low‐temperature Hall coefficient and resistivity data on selenium‐doped GaSb are interpreted under the assumption that selenium introduces a donor level above the principal [000] conduction band minimum. The postulated level is associated with electrons in [111] valleys localized in hydrogen‐like orbits around selenium atoms. The results at 77°K are consistent with the assumption that impurity scattering is dominant and that a selenium donor level is located about 0.07 ev above the principal conduction band edge at 77°K. The low‐temperature data on tellurium‐doped samples are also discussed.