A theory is presented which provides insight into the effects of band‐bending on the energy distribution of photoemitted electrons. A ``band‐bending distribution function'' is introduced to relate the energy distribution of electrons when band‐bending is present to that when no band‐bending is present. Specific band‐bending distribution functions are presented for an exponential, a linear, and a more complicated dependence of potential on distance from the surface. Significant differences between the effects of upward and downward band‐bending related to apparent electron affinity and energy shifts in structure are discussed. The accuracy of the analysis improves for electron energies well above the threshold for escape. The density of surface states on homogeneous material required to produce observable effects due to band‐bending is estimated.