Model for the Electronic Transport Properties of Mixed Valency Semiconductors
作者:
R. C. Miller,
R. R. Heikes,
R. Mazelsky,
期刊:
Journal of Applied Physics
(AIP Available online 1961)
卷期:
Volume 32,
issue 10
页码: 2202-2206
ISSN:0021-8979
年代: 1961
DOI:10.1063/1.1777043
出版商: AIP
数据来源: AIP
摘要:
It is shown that the simple ``hopping model'' for the transport processes of mixed valency semiconductors is inadequate for impurity concentrations [similar or greaterthan]1%. In particular, it is necessary to redefine (1) the number of free charge carriers, and (2) the density of available states because of the dominant role played by the impurities in the high concentration range.
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