We present the first measurements of room‐temperature excitonic absorption saturation in a II‐VI semiconductor quantum well. Strong room‐temperature excitonic absorption in CdZnTe/ZnTe quantum wells is found to saturate at an incident optical intensity that is considerably higher than that for III‐V quantum wells. We show that this phenomenon can be interpreted in terms of the smaller excitonic Bohr radius characteristic of wide‐gap II‐VI compounds.