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Electron impact excitation of the helium isoelectronic sequence

 

作者: P. S. Ganas,  

 

期刊: Journal of Applied Physics  (AIP Available online 1981)
卷期: Volume 52, issue 11  

页码: 6482-6483

 

ISSN:0021-8979

 

年代: 1981

 

DOI:10.1063/1.328597

 

出版商: AIP

 

数据来源: AIP

 

摘要:

A simple analytic central potential with two adjustable parameters is proposed for the helium isoelectronic sequence. The potential parameters are obtained by appealing to the precise values of optical oscillator strengths calculated by Schiffetal. Using the Born approximation we calculate generalized oscillator strengths and integrated cross sections from threshold up to 5 keV for the electron impact excitation of the resonance transition 11S–21Pin the helium isoelectronic sequence. The accuracy and the systematics of the results are discussed.

 

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