Defect reduction by thermal annealing of GaAs layers grown by molecular beam epitaxy on Si substrates
作者:
J. W. Lee,
H. Shichijo,
H. L. Tsai,
R. J. Matyi,
期刊:
Applied Physics Letters
(AIP Available online 1987)
卷期:
Volume 50,
issue 1
页码: 31-33
ISSN:0003-6951
年代: 1987
DOI:10.1063/1.98117
出版商: AIP
数据来源: AIP
摘要:
Post growth thermal annealing has been used to reduce the defect density of GaAs layers grown on Si substrates by molecular beam epitaxy. Transmission electron microscopy indicates a 100× reduction of the true defect density. Twins and stacking faults were eliminated entirely. Most misfit dislocations were confined within the first ∼150 A˚ GaAs layer and formed a regular and narrow network along the Si/GaAs interface. Similar results were obtained from an ion implanted and annealed specimen.
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