Use of guided spontaneous emission of a semiconductor to probe the optical properties of two-dimensional photonic crystals
作者:
D. Labilloy,
H. Benisty,
C. Weisbuch,
T. F. Krauss,
R. Houdre´,
U. Oesterle,
期刊:
Applied Physics Letters
(AIP Available online 1997)
卷期:
Volume 71,
issue 6
页码: 738-740
ISSN:0003-6951
年代: 1997
DOI:10.1063/1.119630
出版商: AIP
数据来源: AIP
摘要:
We describe an experimental setup, which allows assessing the optical properties of two-dimensional photonic crystals combined with a waveguide geometry, and etched into a light-emitting (GaAs/InGaAs) semiconductor. By means of a guiding layer, the spontaneous emission of the material is used as a built-in source to probe the properties of the etched microstructure, conveniently compared to the usual measurement schemes. We show polarized transmission and coefficients largely depending on the photonic crystal orientation. ©1997 American Institute of Physics.
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