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Use of guided spontaneous emission of a semiconductor to probe the optical properties of two-dimensional photonic crystals

 

作者: D. Labilloy,   H. Benisty,   C. Weisbuch,   T. F. Krauss,   R. Houdre´,   U. Oesterle,  

 

期刊: Applied Physics Letters  (AIP Available online 1997)
卷期: Volume 71, issue 6  

页码: 738-740

 

ISSN:0003-6951

 

年代: 1997

 

DOI:10.1063/1.119630

 

出版商: AIP

 

数据来源: AIP

 

摘要:

We describe an experimental setup, which allows assessing the optical properties of two-dimensional photonic crystals combined with a waveguide geometry, and etched into a light-emitting (GaAs/InGaAs) semiconductor. By means of a guiding layer, the spontaneous emission of the material is used as a built-in source to probe the properties of the etched microstructure, conveniently compared to the usual measurement schemes. We show polarized transmission and coefficients largely depending on the photonic crystal orientation. ©1997 American Institute of Physics.

 

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