Structures and defects in arsenic-ion-implanted GaAs films annealed at high temperatures
作者:
Wen-Chung Chen,
C.-S. Chang,
期刊:
Journal of Applied Physics
(AIP Available online 1997)
卷期:
Volume 81,
issue 11
页码: 7295-7300
ISSN:0021-8979
年代: 1997
DOI:10.1063/1.365327
出版商: AIP
数据来源: AIP
摘要:
The structures and defects are studied in arsenic-ion-implantedGaAs(As+–GaAs)films annealed at temperatures higher than 600 °C by using transmission electron microscopy, deep level transient spectroscopy, temperature-dependent conductance, and photoluminescence. The estimated concentration of arsenic precipitates in films decreases from∼4×1016 cm−3to∼6×1015 cm−3and the corresponding size increases from∼3to∼10 nmas the annealing temperature increases from 600 to 800 °C. A defect with an energy level at about 0.3 eV from the band edge is found and its concentration increases with the increasing annealing temperatures. The electrical transport of free carriers is replaced by hopping conduction, through the defect band at about 0.26 eV below conduction band, when the film is annealed at temperature 800 °C. It indicates that during high-temperature annealing the defect of the arsenic and gallium vacancies due to the diffusion of As and Ga atoms is the dominant factor to change its electrical and structural properties. ©1997 American Institute of Physics.
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