Transfer of patterned ion-cut silicon layers
作者:
C. H. Yun,
A. B. Wengrow,
N. W. Cheung,
Y. Zheng,
R. J. Welty,
Z. F. Guan,
K. V. Smith,
P. M. Asbeck,
E. T. Yu,
S. S. Lau,
期刊:
Applied Physics Letters
(AIP Available online 1998)
卷期:
Volume 73,
issue 19
页码: 2772-2774
ISSN:0003-6951
年代: 1998
DOI:10.1063/1.122586
出版商: AIP
数据来源: AIP
摘要:
The technique of transferring patterned ion-cut layers from one Si wafer to another was demonstrated. The starting silicon wafer was masked with checkerboard and line patterns with a 3 &mgr;m thick polymethylmethacrylate/photoresist and was implanted with5×1016 H+ ions/cm2at 150 keV. After stripping off the mask, the wafer was bonded to an oxide-coated receptor wafer through low-temperature direct wafer bonding. Heat treatment of this bonded pair showed that the hydrogen-induced silicon surface layer cleavage (ion cut) could propagate throughout about16 &mgr;m×16 &mgr;mof nonimplanted material with implanted regions only 4 &mgr;m wide. Mask width, spacing, and implantation profiles through the mask shape were shown to have effects on the internal microfracturing mechanisms. ©1998 American Institute of Physics.
点击下载:
PDF
(705KB)
返 回