Influence of implant induced vacancies and interstitials on boron diffusion in silicon
作者:
S. Solmi,
R. Angelucci,
F. Cembali,
M. Servidori,
M. Anderle,
期刊:
Applied Physics Letters
(AIP Available online 1987)
卷期:
Volume 51,
issue 5
页码: 331-333
ISSN:0003-6951
年代: 1987
DOI:10.1063/1.98431
出版商: AIP
数据来源: AIP
摘要:
A dependence of boron anomalous diffusion on defect depth position has been observed after furnace and electron beam annealing of samples damaged with28Si ions implanted at different energies. This behavior was correlated with the vacancy and interstitial excesses, produced under bombardment in the surface region and in depth, respectively. The spatial separation of these point defects was evidenced by the analysis of the intensity profiles obtained by double‐crystal x‐ray diffraction.
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