Direct engraving on positive resists by synchrotron radiation
作者:
S. Ichimura,
M. Hirata,
H. Tanino,
N. Atoda,
M. Ono,
K. Hoh,
期刊:
Journal of Vacuum Science&Technology B: Microelectronics Processing and Phenomena
(AIP Available online 1983)
卷期:
Volume 1,
issue 4
页码: 1076-1079
ISSN:0734-211X
年代: 1983
DOI:10.1116/1.582636
出版商: American Vacuum Society
关键词: masking;synchrotron radiation;etching;electron spectroscopy;mass spectroscopy;silicon nitrides;lithography;surface structure;photoresists;sensitivity;decomposition
数据来源: AIP
摘要:
Direct engraving of mask patterns in a resist film was tried by exposing with synchrotron radiation. Using a stencil mask made of a Si3N4substrate, submicron structures could be successfully replicated. Fundamental aspects of resist decomposition by synchrotron radiation were also investigated by mass and electron spectroscopy.
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