The effective dopant concentration determined from the capacitance minimum in the high‐frequency capacitance‐voltage curve is related to the actual majority‐carrier density profile through a simple integration formula. Based on this relationship, the nonuniform substrate doping effect on the analysis of group‐III acceptor hydrogenation experiments in silicon is examined. It is found that the procedure in determining the kinetic coefficients by fitting the effective dopant concentration versus avalanche injection or annealing time curves is appropriate if the hydrogen concentration is assumed uniform throughout the semiconductor surface space‐charge layer.