The heteroepitaxial growth of InP on Si by low pressure metalor‐ganic chemical vapor deposition is reported. Trimethylindium‐trimethylphosphine adduct was used as In source in this study. From X‐ray and SEM examinations, good crystallinity InP epilayers with mirror‐like surfaces can be grown directly on (100) and (111)p‐type Si substrates. Carrier concentration profile shows that the carrier distribution in the InP epilayer is very uniform. The efficient photo‐luminescence compared with that of InP homoepitaxy shows the good quality of InP/Si epilayers.