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Demonstration of an imide coupling reaction on aSi(100)-2×1surface by molecular layer deposition

 

作者: T. Bitzer,   N. V. Richardson,  

 

期刊: Applied Physics Letters  (AIP Available online 1997)
卷期: Volume 71, issue 5  

页码: 662-664

 

ISSN:0003-6951

 

年代: 1997

 

DOI:10.1063/1.119822

 

出版商: AIP

 

数据来源: AIP

 

摘要:

In this letter, we report the successful growth of an ultrathin organic film onSi(100)-2×1by reactive coupling of polyimide precursors. Using the molecular layer deposition technique, 1,4-phenylene diamine and pyromellitic dianhydride were sequentially dosed on cleanSi(100)-2×1under ultrahigh vacuum conditions. The interfacial imidization was initiated by thermal curing at 200 °C. High resolution electron energy loss spectroscopy was employed to identify surface species. The spectra show clearly, that an oligimide chain has been formed which stands upright on the substrate. The chain bonds to the silicon substrate via a Si–(NH)–C linkage. ©1997 American Institute of Physics.

 

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