Effect of lithium on the electrical properties of grain boundaries in silicon
作者:
R. T. Young,
M. C. Lu,
R. D. Westbrook,
G. E. Jellison,
期刊:
Applied Physics Letters
(AIP Available online 1981)
卷期:
Volume 38,
issue 8
页码: 628-630
ISSN:0003-6951
年代: 1981
DOI:10.1063/1.92458
出版商: AIP
数据来源: AIP
摘要:
The effect of lithium on the electrical properties of polycrystalline silicon has been studied using scanning light spot and Hall‐effect measurements. It was found that the addition of lithium to polycrystalline silicon significantly improved the majority‐carrier mobility and reduced the minority‐carrier recombination at the grain boundaries. A possible mechanism for the interaction of Li with grain boundaries is discussed.
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