0.1 μm AlGaAs/InGaAs high electron mobility transistor fabrication by the new method of thinned resist pattern reversed by metal
作者:
M. Tanabe,
T. Matsuno,
N. Kashiwagi,
H. Sakai,
K. Inoue,
A. Tamura,
期刊:
Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
(AIP Available online 1996)
卷期:
Volume 14,
issue 5
页码: 3248-3251
ISSN:1071-1023
年代: 1996
DOI:10.1116/1.588815
出版商: American Vacuum Society
关键词: (Al,Ga)As;(In,Ga)As
数据来源: AIP
摘要:
We have developed a novel subquarter micron gate fabrication process without any electron beam (EB) lithography techniques or phase shift (PS) methods. To fabricate a subquarter micron width mask, the process uses thinning line patterns of photoresist by O2reactive ion etching and the reversing of that resist by a thin Al film. We applied this process to fabrication of a pseudomorphic AlGaAs/InGaAs high electron mobility transistor. The device exhibited a peakgmof 715 mS/mm,fTof 95 GHz, andfmaxof 176 GHz. These results show this process to be a useful alternative to EB or PS techniques for subquarter micron gates.
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