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Sn2P2S6films for memory devices with nondestructive readout

 

作者: Elena Arnautova,   Eugene Sviridov,   Eugene Rogach,   Esther Savchenko,   Anatoly Grekov,  

 

期刊: Integrated Ferroelectrics  （Taylor Available online 1992）
卷期: Volume 1, issue 1  

页码: 147-150

 

ISSN:1058-4587

 

年代: 1992

 

DOI:10.1080/10584589208215571

 

出版商: Taylor & Francis Group

 

数据来源: Taylor

 

摘要:

The polarization switching processes of ferroelectric polycrystalline Sn2P2S6films on Al substrates were studied. The effect of full reverse spontaneous switching after the influence of a repolarizing pulse on the prepoled sample was investigated. This opens the way for making the ferroelectric memory devices with rapid nondestructive readout.

 

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