Homoepitaxial diamond films were grown at temperatures between 1000 and 1400 °C with an oxy‐acetylene torch. The growth rates of the {100} and {111} faces were observed to increase through 1400 °C, while the {110} face did not grow above 1400 °C. The quality of all faces deteriorated significantly between 1300 and 1400 °C, as shown by scanning electron microscopy and Raman spectroscopy. The transparency of a film as measured by Fourier‐transform infrared spectroscopy was type‐IIa quality with very little C–H absorption.