Quantitative chemical delineation of bothn+andp+junctions in silicon‐based integrated circuits has been achieved and monitored with respect to etching time, temperature, and ultraviolet illumination, using samples prepared by a new planar polishing technique for uniform initial flatness. Junction depths and dopant profiles obtained from cross‐sectional transmission electron microscopy images are compared and cross‐calibrated with both secondary ion mass spectrometry and spreading resistance profiling, confirming that dopant concentrations of 1017cm−3are detected and laterally mapped with 10 nm spatial resolution.