Carrier temperature relaxation probed by femtosecond transient grating experiments in CdSxSe1−xsemiconductors
作者:
Dao van Lap,
U. Peschel,
H. E. Ponath,
W. Rudolph,
期刊:
Journal of Applied Physics
(AIP Available online 1992)
卷期:
Volume 72,
issue 11
页码: 5409-5415
ISSN:0021-8979
年代: 1992
DOI:10.1063/1.351980
出版商: AIP
数据来源: AIP
摘要:
The relaxation of the electron temperature in CdSxSe1−xwas measured by transmission and transient grating experiments using fs light pulses. As compared with ordinary ambipolar diffusion, at high excitation a pronounced delayed rise and a faster decrease of the diffraction signal was observed. A theoretical model that includes one‐ and two‐photon excitation, gap shrinkage, diffusion, and temperature relaxation explains these experimental findings as a result of temperature relaxation with a characteristic time constant of 1±0.2 ps.
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