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Carrier temperature relaxation probed by femtosecond transient grating experiments in CdSxSe1−xsemiconductors

 

作者: Dao van Lap,   U. Peschel,   H. E. Ponath,   W. Rudolph,  

 

期刊: Journal of Applied Physics  (AIP Available online 1992)
卷期: Volume 72, issue 11  

页码: 5409-5415

 

ISSN:0021-8979

 

年代: 1992

 

DOI:10.1063/1.351980

 

出版商: AIP

 

数据来源: AIP

 

摘要:

The relaxation of the electron temperature in CdSxSe1−xwas measured by transmission and transient grating experiments using fs light pulses. As compared with ordinary ambipolar diffusion, at high excitation a pronounced delayed rise and a faster decrease of the diffraction signal was observed. A theoretical model that includes one‐ and two‐photon excitation, gap shrinkage, diffusion, and temperature relaxation explains these experimental findings as a result of temperature relaxation with a characteristic time constant of 1±0.2 ps.

 

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