Etched buried heterostructure GaAs/GaAlAs injection lasers
作者:
R. D. Burnham,
D. R. Scifres,
期刊:
Applied Physics Letters
(AIP Available online 1975)
卷期:
Volume 27,
issue 9
页码: 510-511
ISSN:0003-6951
年代: 1975
DOI:10.1063/1.88538
出版商: AIP
数据来源: AIP
摘要:
An injection laser is described in which a semicircular GaAs active region is completely surrounded by Ga1−xAlxAs by using selective etching and a single liquid‐phase epitaxial growth.The active region dimensions can be made much more symmetric than those obtained with conventional stripe geometry lasers resulting in improved optical characteristics and low room‐temperature threshold currents.
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