Diffusion of Aluminum in Single Crystal Silicon
作者:
R. C. Miller,
A. Savage,
期刊:
Journal of Applied Physics
(AIP Available online 1956)
卷期:
Volume 27,
issue 12
页码: 1430-1432
ISSN:0021-8979
年代: 1956
DOI:10.1063/1.1722283
出版商: AIP
数据来源: AIP
摘要:
The diffusion of aluminum into silicon has been reinvestigated to clear up certain discrepancies in the existing aluminum data. The diffusion constants found in this work are in good agreement with those determined by Fuller and Ditzenberger and an order of magnitude less than those reported in another investigation. Aluminum solid solubilities in the neighborhood of 1019atoms/cm3have been found over the 1200 to 1400°C temperature range. These concentrations are several orders of magnitude larger than those reported in other aluminum diffusion investigations. Thep‐njunction penetrations and transition capacitances of the diffused samples were used to determine diffusivities and solid solubilities.
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