Pb(Zr, Ti)O3thin film growth on yttrium-treated Si(100)
作者:
N.J. Wu,
A. Ignatiev,
A. Mesarwi,
H.D. Shih,
期刊:
Integrated Ferroelectrics
(Taylor Available online 1993)
卷期:
Volume 3,
issue 2
页码: 139-145
ISSN:1058-4587
年代: 1993
DOI:10.1080/10584589308216708
出版商: Taylor & Francis Group
关键词: Ferroelectric;PZT Film on Si;Laser Ablation
数据来源: Taylor
摘要:
Pulsed laser ablation has been used to deposit ferroelectric Pb(Zr, Ti)O3(PZT) thin films on Si(100) and on yttrium-treated Si(100) substrates. The yttrium (Y) treatment of a Si surface followed by oxidation resulted in formation of a very thin, Y-enhanced SiO2antidiffusion barrier layer, thereby suppressing the undesirable PZT/Si interdiffusion. The best PZT film grown on Y-treated Si(100) had a breakdown voltage of 0.6 MV/cm, a coercive field of 71 KV/cm, and a remanent polarization of 18 μC/cm2.
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