Insituballistic‐electron‐emission microscopy (BEEM) and spectroscopy (BEES) have been performed at 77 K on CoSi2/Si(100) and Si(111) grown by molecular beam epitaxy (MBE). Scattering at individual interface dislocations and point defects gives rise to a localized increase of the BEEM current onn‐Si(111) and a decrease onp‐Si(111) in agreement with a kinematic interpretation. Onn‐Si(100), (110)‐oriented grains exhibit a Schottky barrier of 0.58±0.04 V compared to 0.74±0.04 V on (100)‐oriented CoSi2. The magnitude of the BEEM current strongly depends on the epitaxial orientation on Si(100) and is comparable for CoSi2(100)/n‐Si(100) and CoSi2/n‐Si(111).