Electron and hole drift mobility have been measured inn‐ andp‐type amorphous Si Schottky‐barrier solar cells. At room temperature &mgr;dn= (2–5) ×10−2cm2/V sec and &mgr;dp= (5–6) ×10−4cm2/V sec. Both mobilities are trap controlled with &Dgr;E=0.19 eV for electrons and &Dgr;E=0.35 eV for holes above 250 °K and &Dgr;E=0.16 and 0.26 eV, respectively, below 250 °K. Majority‐carrier lifetimes are estimated to be 1 &mgr;sec for electrons and 25 &mgr;sec for holes.