2.7‐&mgr;m InGaAsSb/AlGaAsSb laser diodes with continuous‐wave operation up to −39 °C
作者:
D. Z. Garbuzov,
R. U. Martinelli,
R. J. Menna,
P. K. York,
H. Lee,
S. Y. Narayan,
J. C. Connolly,
期刊:
Applied Physics Letters
(AIP Available online 1995)
卷期:
Volume 67,
issue 10
页码: 1346-1348
ISSN:0003-6951
年代: 1995
DOI:10.1063/1.115546
出版商: AIP
数据来源: AIP
摘要:
We have demonstrated continuous wave operation of 2.7‐&mgr;m InGaAsSb/AlGaAsSb multiquantum‐well diode lasers up to a temperature of 234 K (−39 °C). These devices were grown by molecular‐beam‐epitaxy. They have a tendency to operate in a dominant single mode over well‐defined temperature and current intervals. A comparison of spontaneous emission spectra shows that above threshold, the quasi‐Fermi level is pinned and that most of the carriers are injected into nonlasing states. This effect leads to a rapid decrease of differential efficiency with increasing temperature. ©1995 American Institute of Physics.
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