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Enhanced protection of GaAs against thermal surface degradation by encapsulated annealing in an arsine ambient

 

作者: P. M. Campbell,   O. Aina,   B. J. Baliga,  

 

期刊: Applied Physics Letters  （AIP Available online 1984）
卷期: Volume 45, issue 1  

页码: 95-97

 

ISSN:0003-6951

 

年代: 1984

 

DOI:10.1063/1.94982

 

出版商: AIP

 

数据来源: AIP

 

摘要:

This letter reports a technique of encapsulated annealing in an arsine ambient which is shown to provide better surface protection for GaAs against thermal degradation than either encapsulation alone or capless annealing in arsine.

 

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