Cubic (In,Ga)N layers with In contents up to 11&percent; are grown on GaAs(001) by dc plasma-assisted molecular beam epitaxy. Comparatively high substrate temperatures are used to desorb In accumulated on the growth front by the massive In segregation in this material system. We report the observation of band-edge photoluminescence and the dependence of the emission energy on In composition for the (In,Ga)N layers. ©1997 American Institute of Physics.