&agr;‐radiation‐induced deep levels in low‐dopedn‐type silicon
作者:
N. Zafar,
M. Zafar Iqbal,
期刊:
Journal of Applied Physics
(AIP Available online 1990)
卷期:
Volume 68,
issue 2
页码: 887-889
ISSN:0021-8979
年代: 1990
DOI:10.1063/1.346752
出版商: AIP
数据来源: AIP
摘要:
Observations on deep levels introduced in silicon by &agr;‐particle irradiation are reported. Low‐dopedn‐type samples are used and deep level transient spectroscopy is applied to detect the deep levels. Preliminary results provide evidence for some new defect states in addition to those previously reported. The study also reveals interesting metastability and room‐temperature transformation effects associated with some of the deep levels introduced.
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