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Characteristics of the metal insulator semiconductor structure:AlN/Si

 

作者: M. Morita,   S. Isogai,   K. Tsubouchi,   N. Mikoshiba,  

 

期刊: Applied Physics Letters  （AIP Available online 1981）
卷期: Volume 38, issue 1  

页码: 50-52

 

ISSN:0003-6951

 

年代: 1981

 

DOI:10.1063/1.92129

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Single‐crystal AlN layers have been grown on Si substrates at ∼1200 °C using metalorganic chemical vapor deposition. The metal/AlN/Si MIS structures have been investigated by the MIS conductance method. It was found that the interface‐state densityNssand electron capture cross section &sgr;nin the depletion region are of the order of 1011eV−1cm−2and 10−17cm, respectively.

 

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