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Highly electronegative metallic contacts to semiconductors using polymeric sulfur nitride

 

作者: R. A. Scranton,   J. B. Mooney,   J. O. McCaldin,   T. C. McGill,   C. A. Mead,  

 

期刊: Applied Physics Letters  （AIP Available online 1976）
卷期: Volume 29, issue 1  

页码: 47-48

 

ISSN:0003-6951

 

年代: 1976

 

DOI:10.1063/1.88868

 

出版商: AIP

 

数据来源: AIP

 

摘要:

The Schottky barriers formed onn‐ZnS andn‐ZnSe by polymeric sulfur nitride have been compared to barriers formed by Au. Barrier energies as determined by photoresponse, current‐voltage, and capacitance‐voltage methods show that (SN)xis approximately 1.0 eV higher than Au onn‐ZnS and 0.3–0.4 eV higher than Au onn‐ZnSe. We believe that this is the first report of any metallic contact more electronegative than Au.

 

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