A method has been developed to obtain, by means of charge‐collection microscopy (CCM), a calibrated two‐dimensional map of the electrical activity of the minority carriers in a semiconductor crystal over large crystal dimensions. This is achieved by the calibration of the collection current in terms of the minority‐carrier diffusion length and a photographic gray scale. The technique is applied to plastically deformed silicon and proves that it has great potential for the evaluation of electrical activity mechanisms in imperfect silicon.