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Electrical properties of laser chemically doped silicon

 

作者: T. F. Deutsch,   D. J. Ehrlich,   D. D. Rathman,   D. J. Silversmith,   R. M. Osgood,  

 

期刊: Applied Physics Letters  （AIP Available online 1981）
卷期: Volume 39, issue 10  

页码: 825-827

 

ISSN:0003-6951

 

年代: 1981

 

DOI:10.1063/1.92572

 

出版商: AIP

 

数据来源: AIP

 

摘要:

The electrical properties of single‐crystal and amorphous Si, doped using a pulsed UV laser, have been studied as a function of laser wavelength and fluence and of UV dose. BCl3or PCl3parent gases were used to provide B or P dopant atoms. Dissociation of molecules adsorbed on the Si surface can supplement photolysis of gas‐phase molecules as a source of doping atoms.

 

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