Highly strained GaAs/InGaAs/AlAs resonant tunneling diodes with simultaneously high peak current densities and peak‐to‐valley ratios at room temperature
作者:
R. M. Kapre,
A. Madhukar,
S. Guha,
期刊:
Applied Physics Letters
(AIP Available online 1991)
卷期:
Volume 58,
issue 20
页码: 2255-2257
ISSN:0003-6951
年代: 1991
DOI:10.1063/1.104943
出版商: AIP
数据来源: AIP
摘要:
Highly strained In0.33Ga0.67As/AlAs‐based resonant tunneling diodes have been fabricated on GaAs(100) substrates without the use of thick strain relieving buffer layers. These structures exhibit a simultaneously high peak current density (Jp) of 125 kA/cm2and a peak to valley ratio (PVR) of 4.7. A PVR of 5.9 withJp=73 kA/cm2is observed on some devices, the highest PVR seen for such devices. The excellent resonant tunneling characteristics of these devices are attributed to accurate device design using a &Ggr;‐X‐&Ggr;‐X‐&Ggr; resonant tunneling path and to high quality interfaces obtained through the use of optimized growth conditions.
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