首页   按字顺浏览 期刊浏览 卷期浏览 Stabilization of InP substrate under annealing in the presence of GaAs
Stabilization of InP substrate under annealing in the presence of GaAs

 

作者: M. Sacilotti,   R. A. Masut,   A. P. Roth,  

 

期刊: Applied Physics Letters  (AIP Available online 1986)
卷期: Volume 48, issue 7  

页码: 481-483

 

ISSN:0003-6951

 

年代: 1986

 

DOI:10.1063/1.96536

 

出版商: AIP

 

数据来源: AIP

 

摘要:

We report on the annealing of InP and GaAs substrates, placed side by side, in a hydrogen atmosphere. This annealing is done with and without arsine, and also in the presence of elemental arsenic replacing GaAs. This simple technique shows the stabilization of InP by the presence of GaAs in a temperature range between 550 and 750 °C. It gives information about active species present during substrate annealing. The results obtained show that the protecting species of column V elements, dimers or tetramers, behave differently than the ones resulting from the decomposition of the V hydride.

 

点击下载:  PDF (266KB)



返 回