Gamma−ray spectroscopy with single−carrier collection in high−resistivity semiconductors
作者:
H. L. Malm,
C. Canali,
J. W. Mayer,
M−A. Nicolet,
K. R. Zanio,
W. Akutagawa,
期刊:
Applied Physics Letters
(AIP Available online 1975)
卷期:
Volume 26,
issue 6
页码: 344-346
ISSN:0003-6951
年代: 1975
DOI:10.1063/1.88158
出版商: AIP
数据来源: AIP
摘要:
With the standard plane−parallel configuration of semiconductor detectors, good &ggr;−ray spectra can only be obtained when both electrons and holes are completely collected. We show by calculations (and experiments) that with contacts of hemispherical configuration one can obtain &ggr;−ray spectra of adequate resolution and with signal heights of nearly full amplitude even when only one type of carrier is collected. Experiments with CdTe detectors for which the &mgr;&tgr; product for electrons is about 103times that of the holes confirm these calculations. The adoption of hemispherical contacts thus widens the range of high−resistivity semiconductors potentially acceptable for &ggr;−ray detection at room temperature.
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