首页   按字顺浏览 期刊浏览 卷期浏览 Gamma−ray spectroscopy with single−carrier collection in high−resisti...
Gamma−ray spectroscopy with single−carrier collection in high−resistivity semiconductors

 

作者: H. L. Malm,   C. Canali,   J. W. Mayer,   M−A. Nicolet,   K. R. Zanio,   W. Akutagawa,  

 

期刊: Applied Physics Letters  (AIP Available online 1975)
卷期: Volume 26, issue 6  

页码: 344-346

 

ISSN:0003-6951

 

年代: 1975

 

DOI:10.1063/1.88158

 

出版商: AIP

 

数据来源: AIP

 

摘要:

With the standard plane−parallel configuration of semiconductor detectors, good &ggr;−ray spectra can only be obtained when both electrons and holes are completely collected. We show by calculations (and experiments) that with contacts of hemispherical configuration one can obtain &ggr;−ray spectra of adequate resolution and with signal heights of nearly full amplitude even when only one type of carrier is collected. Experiments with CdTe detectors for which the &mgr;&tgr; product for electrons is about 103times that of the holes confirm these calculations. The adoption of hemispherical contacts thus widens the range of high−resistivity semiconductors potentially acceptable for &ggr;−ray detection at room temperature.

 

点击下载:  PDF (203KB)



返 回