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Photoemission study of low pressure chemical vapor deposited and reactively sputtered titanium nitride in W/TiN/Si

 

作者: Sunil Kumar,   D. R. Chopra,   Gregory C. Smith,  

 

期刊: Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena  （AIP Available online 1992）
卷期: Volume 10, issue 3  

页码: 1218-1220

 

ISSN:1071-1023

 

年代: 1992

 

DOI:10.1116/1.585891

 

出版商: American Vacuum Society

 

关键词: TUNGSTEN;TITANIUM NITRIDES;SILICON;CHEMICAL VAPOR DEPOSITION;PHOTOELECTRON SPECTROSCOPY;X RADIATION;CHEMICAL REACTIONS;SPUTTERED MATERIALS;INTERFACE PHENOMENA

 

数据来源: AIP

 

摘要:

Low‐pressure chemical vapor deposited (LPCVD) tungsten has been deposited onto LPCVD grown and reactively sputtered titanium nitride (TiN) films. The x‐ray photoelectron spectroscopy depth profiles and the chemical analysis suggest that the chemical interaction of TiN with W and with the Si/SiO2substrates tends to be minimal.

 

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