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Thermoelectric Effect of Hot Carriers in Semiconductors with Nonparabolic Energy Bands

 

作者: Jyoti Kamal,   Satish Sharma,   Predhiman Kaw,  

 

期刊: Journal of Applied Physics  （AIP Available online 1970）
卷期: Volume 41, issue 5  

页码: 2241-2243

 

ISSN:0021-8979

 

年代: 1970

 

DOI:10.1063/1.1659194

 

出版商: AIP

 

数据来源: AIP

 

摘要:

An analytical investigation of the thermoelectric effect of hot carriers in semiconductors with non‐parabolic energy bands and spherical energy surfaces has been carried out. The analysis is good for moderately high intensities of the applied electric field. Some numerical results, particularly applicable to indium arsenide and indium antimonide, are presented at the end.

 

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