Electron‐cyclotron‐resonance (ECR) plasma offers a potentially better way of controlling the growth chemistry of a‐Si:H. Such control can be expected to improve the microstructure of a‐Si:H, and hence its stability. In this paper, we report on the preparation and properties of a‐Si:H films produced using a remote ECR plasma at low pressures. It is shown that the ECR‐ a‐Si:H films have electronic properties comparable to glow‐discharge produced films. The stability of ECR‐films appears to be superior to glow‐discharge‐films.